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Sensors (Basel, Switzerland) Feb 2023The results obtained in the wafer test process are expressed as a wafer map and contain important information indicating whether each chip on the wafer is functioning...
The results obtained in the wafer test process are expressed as a wafer map and contain important information indicating whether each chip on the wafer is functioning normally. The defect patterns shown on the wafer map provide information about the process and equipment in which the defect occurred, but automating pattern classification is difficult to apply to actual manufacturing sites unless processing speed and resource efficiency are supported. The purpose of this study was to classify these defect patterns with a small amount of resources and time. To this end, we explored an efficient convolutional neural network model that can incorporate three properties: (1) state-of-the-art performances, (2) less resource usage, and (3) faster processing time. In this study, we dealt with classifying nine types of frequently found defect patterns: center, donut, edge-location, edge-ring, location, random, scratch, near-full type, and None type using open dataset WM-811K. We compared classification performance, resource usage, and processing time using EfficientNetV2, ShuffleNetV2, MobileNetV2 and MobileNetV3, which are the smallest and latest light-weight convolutional neural network models. As a result, the MobileNetV3-based wafer map pattern classifier uses 7.5 times fewer parameters than ResNet, and the training speed is 7.2 times and the inference speed is 4.9 times faster, while the accuracy is 98% and the F1 score is 89.5%, achieving the same level. Therefore, it can be proved that it can be used as a wafer map classification model without high-performance hardware in an actual manufacturing system.
PubMed: 36850523
DOI: 10.3390/s23041926 -
Biomedicines Nov 2022Current vaginal formulations, such as gels and pessaries, have limitations, including poor retention. Therefore, the use of mucoadhesive formulations that adhere to the...
Current vaginal formulations, such as gels and pessaries, have limitations, including poor retention. Therefore, the use of mucoadhesive formulations that adhere to the vaginal wall would allow prolonged retention and controlled drug release while reducing the required dose and the potential toxicity associated with high drug loading. The aim of the current research was to develop, characterize, and optimize freeze-dried wafers loaded with metronidazole (MTz) to treat vaginal bacterial infections. Blank (BLK) composite wafers comprising carrageenan (CARR) and sodium alginate (SA) were initially formulated; however, due to poor physico-chemical properties, Carbopol (CARB), hydroxypropylmethylcellulose (HPMC), and polyethylene glycol 200 (PEG) were included. The MTz-loaded formulations were obtained by loading optimized composite CARB:CARR- or CARB:SA-based gels (modified with HPMC and/or PEG) with 0.75% of MTz prior to freeze-drying. The physico-chemical properties were investigated using texture analysis (resistance to compressive deformation and adhesion), scanning electron microscopy (SEM), X-ray diffractometry (XRD), and attenuated total reflectance Fourier-transform infrared (ATR-FTIR) spectroscopy. Functional properties were investigated by examining the swelling, porosity, drug release, and in vitro antimicrobial activity using as a model infection-causative agent. The results showed that HPMC and PEG generally improved the wafer's appearance, with smoother surfaces for easy insertion. From the physico-chemical characterization studies, only two composite wafers prepared from 8% CARB:SA 1:4 and 8% CARB:SA 1:9 gels were deemed optimal and loaded with MTz. Both formulations showed sustained drug release and achieved almost 100% cumulative release within 72 h in simulated vaginal fluid. The data obtained from the drug dissolution (release) experiments were fitted to various mathematical equations and showed the highest correlation coefficient with the Higuchi equation, suggesting a drug release based on diffusion from a swollen matrix; this was confirmed by the Korsmeyer-Peppas equation. The released MTz inhibited the growth of the . used as a model bacterial organism.
PubMed: 36551789
DOI: 10.3390/biomedicines10123036 -
Nanomaterials (Basel, Switzerland) Nov 2022Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation...
Recently, as an alternative solution for overcoming the scaling-down limitations of logic devices with design length of less than 3 nm and enhancing DRAM operation performance, 3D heterogeneous packaging technology has been intensively researched, essentially requiring Si wafer polishing at a very high Si polishing rate (500 nm/min) by accelerating the degree of the hydrolysis reaction (i.e., Si-O-H) on the polished Si wafer surface during CMP. Unlike conventional hydrolysis reaction accelerators (i.e., sodium hydroxide and potassium hydroxide), a novel hydrolysis reaction accelerator with amine functional groups (i.e., 552.8 nm/min for ethylenediamine) surprisingly presented an Si wafer polishing rate >3 times higher than that of conventional hydrolysis reaction accelerators (177.1 nm/min for sodium hydroxide). This remarkable enhancement of the Si wafer polishing rate for ethylenediamine was principally the result of (i) the increased hydrolysis reaction, (ii) the enhanced degree of adsorption of the CMP slurry on the polished Si wafer surface during CMP, and (iii) the decreased electrostatic repulsive force between colloidal silica abrasives and the Si wafer surface. A higher ethylenediamine concentration in the Si wafer CMP slurry led to a higher extent of hydrolysis reaction and degree of adsorption for the slurry and a lower electrostatic repulsive force; thus, a higher ethylenediamine concentration resulted in a higher Si wafer polishing rate. With the aim of achieving further improvements to the Si wafer polishing rates using Si wafer CMP slurry including ethylenediamine, the Si wafer polishing rate increased remarkably and root-squarely with the increasing ethylenediamine concentration.
PubMed: 36364668
DOI: 10.3390/nano12213893 -
Nature May 2024Flexible and large-area electronics rely on thin-film transistors (TFTs) to make displays, large-area image sensors, microprocessors, wearable healthcare patches,...
Flexible and large-area electronics rely on thin-film transistors (TFTs) to make displays, large-area image sensors, microprocessors, wearable healthcare patches, digital microfluidics and more. Although silicon-based complementary metal-oxide-semiconductor (CMOS) chips are manufactured using several dies on a single wafer and the multi-project wafer concept enables the aggregation of various CMOS chip designs within the same die, TFT fabrication is currently lacking a fully verified, universal design approach. This increases the cost and complexity of manufacturing TFT-based flexible electronics, slowing down their integration into more mature applications and limiting the design complexity achievable by foundries. Here we show a stable and high-yield TFT platform for the fabless manufacturing of two mainstream TFT technologies, wafer-based amorphous indium-gallium-zinc oxide and panel-based low-temperature polycrystalline silicon, two key TFT technologies applicable to flexible substrates. We have designed the iconic 6502 microprocessor in both technologies as a use case to demonstrate and expand the multi-project wafer approach. Enabling the foundry model for TFTs, as an analogy of silicon CMOS technologies, can accelerate the growth and development of applications and technologies based on these devices.
Topics: Transistors, Electronic; Silicon; Electronics; Indium; Gallium; Zinc Oxide; Equipment Design; Semiconductors
PubMed: 38658759
DOI: 10.1038/s41586-024-07306-2 -
Nano Letters Sep 2021Nanowire solar cells have the potential to reach the same efficiencies as the world-record III-V solar cells while using a fraction of the material. For solar energy...
Nanowire solar cells have the potential to reach the same efficiencies as the world-record III-V solar cells while using a fraction of the material. For solar energy harvesting, large-area nanowire solar cells have to be processed. In this work, we demonstrate the synthesis of epitaxial InP nanowire arrays on a 2 inch wafer. We define five array areas with different nanowire diameters on the same wafer. We use a photoluminescence mapper to characterize the sample optically and compare it to a homogeneously exposed reference wafer. Both steady-state and time-resolved photoluminescence maps are used to study the material's quality. From a mapping of reflectance spectra, we simultaneously extract the diameter and length of the nanowires over the full wafer. The extracted knowledge of large-scale nanowire synthesis will be crucial for the upscaling of nanowire-based solar cells, and the demonstrated wafer-scale characterization methods will be central for quality control during manufacturing.
PubMed: 34449221
DOI: 10.1021/acs.nanolett.1c02542 -
Micromachines Jun 2021Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst... (Review)
Review
Electroless etching of semiconductors has been elevated to an advanced micromachining process by the addition of a structured metal catalyst. Patterning of the catalyst by lithographic techniques facilitated the patterning of crystalline and polycrystalline wafer substrates. Galvanic deposition of metals on semiconductors has a natural tendency to produce nanoparticles rather than flat uniform films. This characteristic makes possible the etching of wafers and particles with arbitrary shape and size. While it has been widely recognized that spontaneous deposition of metal nanoparticles can be used in connection with etching to porosify wafers, it is also possible to produced nanostructured powders. Metal-assisted catalytic etching (MACE) can be controlled to produce (1) etch track pores with shapes and sizes closely related to the shape and size of the metal nanoparticle, (2) hierarchically porosified substrates exhibiting combinations of large etch track pores and mesopores, and (3) nanowires with either solid or mesoporous cores. This review discussed the mechanisms of porosification, processing advances, and the properties of the etch product with special emphasis on the etching of silicon powders.
PubMed: 34209231
DOI: 10.3390/mi12070776 -
Micromachines Mar 2022The hybrid wafer bonding technique is drawing much interest in relation to three-dimensional integration technology, and its areas of application are expanding from...
The hybrid wafer bonding technique is drawing much interest in relation to three-dimensional integration technology, and its areas of application are expanding from image sensors to semiconductor memory packages. In hybrid bonding, the bond strength and void formation are the main issues influencing the performance, reliability, and yield of the bonding. In this study, we systematically investigate several parameters that affect both the bond strength and void formation, including the plasma gas, plasma power, and surface roughness. In particular, the effects of the wafer warpage on void formation were investigated. As O gas was used during plasma activation, the highest oxide growth rate and strongest bond strength were achieved. The bond strength improved when the oxide thickness was increased. An increase in the low-frequency plasma power improved the bond strength. However, when the plasma power increased further, the surface roughness increased due to the ion bombardment effect during the use of the plasma, resulting in a reduction in the bond strength. Therefore, optimization of the plasma power is required to improve the bond strength. It was found that the wafer warpage was also an important parameter which affected the formation of edge voids. The wafers with residual compressive stress exhibited fewer edge voids than those with tensile stress. Several methods to minimize edge void formation in wafers are proposed. The present study will provide practical guidelines to enhance the quality and yield of the bonding process and devices.
PubMed: 35457842
DOI: 10.3390/mi13040537 -
Optics Express Jan 2024We design, fabricate, and demonstrate a low-loss and broadband optical interposer with high misalignment tolerance for large-scale integration of many chips using...
We design, fabricate, and demonstrate a low-loss and broadband optical interposer with high misalignment tolerance for large-scale integration of many chips using thermal compression flip-chip bonding. The optical interposer achieves flip-chip integration with photonic integrated circuit die containing evanescent couplers with inter-chip coupling loss of 0.54dB and ±3.53μm 3-dB misalignment tolerance. The loss measurement spectrum indicated wavelength-insensitive loss across O-band and C-band with negligible spectral dependence. Further, we demonstrate 1 to 100 wafer-scale equal power splitting using equal power splitters (EPS) and a path length matching design fabricated using a wafer-scale fabrication technique.
PubMed: 38175061
DOI: 10.1364/OE.504032 -
World Journal of Surgical Oncology Aug 2016Since 2003, only two chemotherapeutic agents, evaluated in phase III trials, have been approved by the US Food and Drug Administration for treatment of newly diagnosed... (Review)
Review
Gliadel wafer implantation combined with standard radiotherapy and concurrent followed by adjuvant temozolomide for treatment of newly diagnosed high-grade glioma: a systematic literature review.
Since 2003, only two chemotherapeutic agents, evaluated in phase III trials, have been approved by the US Food and Drug Administration for treatment of newly diagnosed high-grade glioma (HGG): Gliadel wafers (intracranially implanted local chemotherapy) and temozolomide (TMZ) (systemic chemotherapy). Neither agent is curative, but each has been shown to improve median overall survival (OS) compared to radiotherapy (RT) alone. To date, no phase III trial has tested these agents when used in sequential combination; however, a number of smaller trials have reported favorable results. We performed a systematic literature review to evaluate the combination of Gliadel wafers with standard RT (60 Gy) plus concurrent and adjuvant TMZ (RT/TMZ) for newly diagnosed HGG. A literature search was conducted for the period of January 1995 to September 2015. Data were extracted and categorized, and means and ranges were determined. A total of 11 publications met criteria, three prospective trials and eight retrospective studies, representing 411 patients who received Gliadel plus standard RT/TMZ. Patients were similar in age, gender, and performance status. The weighted mean of median OS was 18.2 months (ten trials, n = 379, range 12.7 to 21.3 months), and the weighted mean of median progression-free survival was 9.7 months (seven trials, n = 287, range 7 to 12.9 months). The most commonly reported grade 3 and 4 adverse events were myelosuppression (10.22 %), neurologic deficit (7.8 %), and healing abnormalities (4.3 %). Adverse events reflected the distinct independent safety profiles of Gliadel wafers and RT/TMZ, with little evidence of enhanced toxicity from their use in sequential combination. In the 11 identified trials, an increased benefit from sequentially combining Gliadel wafers with RT/TMZ was strongly suggested. Median OS tended to be improved by 3 to 4 months beyond that observed for Gliadel wafers or TMZ when used alone in the respective phase III trials. Larger prospective trials of Gliadel plus RT/TMZ are warranted.
Topics: Antineoplastic Agents, Alkylating; Brain Neoplasms; Carmustine; Chemoradiotherapy; Chemotherapy, Adjuvant; Clinical Trials, Phase III as Topic; Combined Modality Therapy; Dacarbazine; Decanoic Acids; Disease-Free Survival; Drug Implants; Glioblastoma; Humans; Middle Aged; Neoplasm Grading; Polyesters; Temozolomide; United States; United States Food and Drug Administration
PubMed: 27557526
DOI: 10.1186/s12957-016-0975-5 -
RSC Advances Feb 2024Perovskite materials have attracted significant attention as innovative and efficient X-ray detectors owing to their unique properties compared to traditional X-ray... (Review)
Review
Perovskite materials have attracted significant attention as innovative and efficient X-ray detectors owing to their unique properties compared to traditional X-ray detectors. Herein, chronologically, we present an in-depth analysis of X-ray detection technologies employing organic-inorganic hybrids (OIHs), all-inorganic and lead-free perovskite material-based single crystals (SCs), thin/thick films and wafers. Particularly, this review systematically scrutinizes the advancement of the diverse synthesis methods, structural modifications, and device architectures exploited to enhance the radiation sensing performance. In addition, a critical analysis of the crucial factors affecting the performance of the devices is also provided. Our findings revealed that the improvement from single crystallization techniques dominated the film and wafer growth techniques. The probable reason for this is that SC-based devices display a lower trap density, higher resistivity, large carrier mobility and lifetime compared to film- and wafer-based devices. Ultimately, devices with SCs showed outstanding sensitivity and the lowest detectable dose rate (LDDR). These results are superior to some traditional X-ray detectors such as amorphous selenium and CZT. In addition, the limited performance of film-based devices is attributed to the defect formation in the bulk film, surfaces, and grain boundaries. However, wafer-based devices showed the worst performance because of the formation of voids, which impede the movement of charge carriers. We also observed that by performing structural modification, various research groups achieved high-performance devices together with stability. Finally, by fusing the findings from diverse research works, we provide a valuable resource for researchers in the field of X-ray detection, imaging and materials science. Ultimately, this review will serve as a roadmap for directing the difficulties associated with perovskite materials in X-ray detection and imaging, proposing insights into the recent status, challenges, and promising directions for future research.
PubMed: 38390503
DOI: 10.1039/d4ra00433g